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Same model may have multiple batches, images only for reference.
FDP15N50 Real Image
Same model may have multiple batches, images only for reference.

FDP15N50

Part No FDP15N50
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 15A TO-220AB
Datasheet
FDP15N50 Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 41nC @ 10V
Max Input Capacitance 1850pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 380 mOhm @ 7.5A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 067016-FDP15N50
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FDP15N50 CAD Model

Description

The Fairchild/ON Semiconductor MOSFET is a high-performance N-Channel device.

  • Drain-Source Breakdown Voltage: 500V
  • Continuous Drain Current: 15A (Tc) @ 25°C
  • Power Dissipation: 300W (Tc)
  • Package: TO-220AB
  • Operating Temperature: -55°C to 175°C (TJ)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Rds On: 380 mOhm @ 7.5A, 10V
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Input Capacitance: 1850pF @ 25V
  • Supply and Demand: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.9252 $60.1380
155+ $0.7588 $117.6140
240+ $0.7357 $176.5680
325+ $0.7115 $231.2375
420+ $0.6884 $289.1280
565+ $0.6168 $348.4920
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,530 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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