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FDP6030L

Part No FDP6030L
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 48A TO-220
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 48A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 18nC @ 5V
Max Input Capacitance 1250pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 52W (Tc)
Maximum Rds On at Id,Vgs 13 mOhm @ 26A, 10V
Temperature Range - Operating -65°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220-3
Dimension TO-220-3
Win Source Part Number 1038328-FDP6030L
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian FDP6030L CAD Model

Description

The Fairchild/ON Semiconductor 1038328-FDP6030L is an obsolete (EOL) MOSFET component that is designed for through-hole mounting.

  • Maximum Power Dissipation: 52W (Tc)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 48A (Ta)
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Rds On at Id,Vgs: 13 mOhm @ 26A, 10V

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