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FDP8860

Part No FDP8860
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 80A TO-220AB
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 222nC @ 10V
Max Input Capacitance 12240pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 254W (Tc)
Maximum Rds On at Id,Vgs 2.5 mOhm @ 80A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220-3
Dimension TO-220-3
Win Source Part Number 1038339-FDP8860
Popularity Medium
Supply and Demand Status Limited
Quantity per package 800
Ultra Librarian 3D Model Ultra Librarian FDP8860 CAD Model

Description

The Fairchild/ON Semiconductor FDP8860 is an N-channel MOSFET with a drain-source breakdown voltage of 30V and a continuous drain current of 80A @ 25°C.

  • Gate-Source Threshold Voltage: 2.5V
  • Maximum Gate Charge: 222nC @ 10V
  • Maximum Rds On: 2.5 mOhm @ 80A, 10V
  • Maximum Input Capacitance: 12240pF @ 15V
  • Supply and Demand Status: Limited
  • Quantity per Package: 800

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $2.2205 $66.6150
65+ $1.8221 $118.4365
100+ $1.7651 $176.5100
140+ $1.7082 $239.1480
175+ $1.6512 $288.9600
235+ $1.4804 $347.8940
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 700 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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