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FDPF12N50

Part No FDPF12N50
Manufacturer Fairchild/ON Semiconductor
Description N-Channel MOSFET 500V, 11.5A, 0.65Ω
Sample
Rohs State rohs
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Manufacturer Fairchild/ON Semiconductor
Win Source Part Number 1173885-FDPF12N50
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FDPF12N50 CAD Model

Description

The FDPF12N50 is an N-Channel MOSFET from Fairchild Semiconductor (now ON Semiconductor), utilizing their PowerTrench® technology. This MOSFET is designed for high-voltage, high-power switching applications, such as power supplies, motor control, and lighting ballasts. It is characterized by its low on-resistance, fast switching speed, and robust avalanche capability.

Applications:

  • Power Supplies (SMPS)
  • Motor Control
  • Lighting Ballasts
  • Uninterruptible Power Supplies (UPS)
  • Induction Heating

Features:

  • Low On-Resistance: Reduces conduction losses and improves efficiency.
  • Fast Switching Speed: Enables efficient operation in high-frequency applications.
  • Avalanche Energy Rated: Withstands transient voltage spikes and ensures robust operation.
  • High Drain-Source Voltage (VDS): Suitable for high-voltage applications.
  • RoHS Compliant: Compliant with RoHS environmental standards.

Benefits:

  • Increased Efficiency: Low on-resistance and fast switching contribute to higher efficiency in power conversion.
  • Improved Reliability: Avalanche energy rating ensures reliable operation under transient conditions.
  • Simplified Design: Low gate charge simplifies gate drive circuitry.
  • Reduced System Cost: High efficiency and simplified design can lead to reduced overall system cost.
  • Enhanced Thermal Performance: Efficient operation reduces heat generation, simplifying thermal management.

Additional Details:

The FDPF12N50 features a drain-source voltage (VDS) of 500V and a continuous drain current (ID) of 12A. It is packaged in a TO-220F package, which provides good thermal performance and electrical isolation. The gate threshold voltage (VGS(th)) is typically around 3V. Its combination of high voltage, high current, and robust design makes it a suitable choice for demanding power switching applications.

This MOSFET is engineered to deliver high performance and reliability in a variety of power electronic systems. Its optimized characteristics make it a valuable component in modern power conversion designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.2672 $50.6880
100+ $1.0398 $103.9800
150+ $1.0073 $151.0950
210+ $0.9748 $204.7080
270+ $0.9423 $254.4210
360+ $0.8448 $304.1280
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 12,000 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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