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Same model may have multiple batches, images only for reference.
FDS4770 Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

FDS4770

Part No FDS4770
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 13.2A 8SOIC
Datasheet
FDS4770 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 13.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 67nC @ 10V
Max Input Capacitance 2819pF @ 20V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 7.5 mOhm @ 13.2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 204127-FDS4770
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian FDS4770 CAD Model

Description

The Fairchild/ON Semiconductor FDS4770 is a MOSFET transistor with an N-Channel polarity.

  • Maximum Power Dissipation: 2.5W (Ta)
  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current: 13.2A (Ta) at 25°C
  • Maximum Rds On: 7.5 mOhm @ 13.2A, 10V
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Maximum Gate Charge: 67nC @ 10V
  • Package: 8-SO
  • Mounting: SMD (SMT)
  • Operating Temperature: -55°C to 150°C (TJ)
  • Category: Discrete Semiconductor Products
  • Status: Obsolete (EOL)

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Pricing & Ordering

Quantity Unit Price Ext. Price
26+ $2.2954 $59.6804
62+ $1.8835 $116.7770
95+ $1.8247 $173.3465
131+ $1.7658 $231.3198
170+ $1.7070 $290.1900
227+ $1.5304 $347.4008
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