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FDS6614A

Part No FDS6614A
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 9.3A 8SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 9.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 17nC @ 5V
Max Input Capacitance 1160pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 18 mOhm @ 9.3A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 067083-FDS6614A
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian FDS6614A CAD Model

Description

The FDS6614A is a MOSFET component from Fairchild/ON Semiconductor. It is an N-channel MOSFET with a maximum power dissipation of 2.5W. This component is ideal for switching applications and has a maximum drain-source breakdown voltage of 30V.

  • Supply and Demand: Limited
  • Lifecycle Status: Obsolete (EOL)
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 17nC @ 5V

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