The Fairchild/ON Semiconductor 016176-FDS6900AS is a 2 N-Channel (Dual) FET with a logic level gate, designed for use in a variety of applications.

• Gate Type: Logic Level
• Package: 8-SO
• Operating Temperature: -55°C to 150°C (TJ)
• Maximum Power Dissipation: 900mW
• Drain-Source Breakdown Voltage: 30V
• Continuous Drain Current: 6.9A @ 25°C, 8.2A
• Gate-Source Threshold Voltage: 3V @ 250μA
• Maximum Gate Charge: 15nC @ 10V
• Maximum Input Capacitance: 600pF @ 15V
• Maximum Rds On: 27 mOhm @ 6.9A, 10V
• Quantity per Reel: 2,500