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FDS6990A

Part No FDS6990A
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 30V 7.5A 8-Pin SOIC T/R / MOSFET 2N-CH 30V 7.5A 8SOIC
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 7.5A
Maximum Rds On at Id,Vgs 22 mOhm @ 7.5A, 10V
Gate-Source Threshold Voltage 3V @ 1mA
Max Gate Charge 14nC @ 5V
Max Input Capacitance 550pF @ 15V
Maximum Power Dissipation 900mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 094101-FDS6990A
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Application Field Used in Industrial, Power Management
Quantity per package 2,500
Family Name FDS6990A
Introduction Date June 10, 1999
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian FDS6990A CAD Model

Description

The Fairchild/ON Semiconductor FDS6990A is a dual N-Channel MOSFET commonly used in industrial and power management applications.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current (25°C): 7.5A
  • Maximum Rds On: 22 mOhm @ 7.5A and 10V
  • Maximum Input Capacitance: 550pF @ 15V
  • Maximum Gate-Source Voltage: ±20V
  • Operating Temperature: -55°C to 150°C
  • Power Dissipation: 900mW
  • Package Type: 8-SO
  • Mounting: SMD (SMT)

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Pricing & Ordering

Quantity Unit Price Ext. Price
27+ $1.8589 $50.1903
58+ $1.7412 $100.9896
90+ $1.6824 $151.4160
128+ $1.5647 $200.2816
167+ $1.5059 $251.4853
208+ $1.4471 $300.9968
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,424 pieces
MOQ: 27 pcs
Order Increment : 1 pcs
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