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FDS8878

Part No FDS8878
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 10.2A 8SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 10.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 26nC @ 10V
Max Input Capacitance 897pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 14 mOhm @ 10.2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 016199-FDS8878
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Quantity per package 2,500
Ultra Librarian 3D Model Ultra Librarian FDS8878 CAD Model

Description

The Fairchild/ON Semiconductor FDS8878 is an N-channel MOSFET designed for discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 10.2A (Ta)
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Gate-Source Voltage (max): ±20V
  • Rds On (max): 14 mOhm @ 10.2A, 10V
  • Power Dissipation: 2.5W (Ta)
  • Mounting Type: SMD (SMT)
  • Technology: MOSFET
  • Polarity: N-Channel
  • Package: Reel - TR (2,500 per package)
  • Popularity: High
  • Supply and Demand: Sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
110+ $0.4647 $51.1170
230+ $0.4353 $100.1190
360+ $0.4206 $151.4160
515+ $0.3912 $201.4680
665+ $0.3765 $250.3725
830+ $0.3618 $300.2940
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 27,500 pieces
MOQ: 110 pcs
Order Increment : 1 pcs
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Shipping Information

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