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FDS9430

Part No FDS9430
Manufacturer Fairchild/ON Semiconductor
Catalog OEM Parts (F - I)
Sample
Rohs State Need to verify
ECAD Module
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RoHS Non-Compliant
Win Source Part Number 965404-FDS9430
Categories OEM Parts(F-I)
Manufacturer Fairchild/ON Semiconductor
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian FDS9430 CAD Model

Description

The FDS9430 is a P-Channel PowerTrench® MOSFET from Fairchild Semiconductor (now ON Semiconductor), designed for use in load switching, power management, and battery management applications. It is characterized by its low on-resistance and fast switching speeds, which contribute to high efficiency and reduced power loss.

Applications:

  • Load Switching
  • Power Management
  • Battery Management
  • DC-DC Conversion

Features:

  • Low On-Resistance (RDS(on)): Minimizes conduction losses and improves efficiency.
  • Fast Switching Speed: Reduces switching losses and allows for higher frequency operation.
  • Logic Level Gate Drive: Enables direct control from low-voltage logic circuits, simplifying design.
  • SO-8 Package: Provides a compact footprint for space-constrained applications.

Benefits:

  • Increased Efficiency: Low RDS(on) and fast switching contribute to higher overall efficiency.
  • Reduced Power Dissipation: Minimizes heat generation, improving system reliability.
  • Simplified Design: Logic-level gate drive simplifies the interface with control circuitry.
  • Compact Solution: The small package size allows for use in space-limited applications.

Additional Details:

The FDS9430 is typically available in an SO-8 package. Key parameters include drain-source voltage (VDS), gate-source voltage (VGS), continuous drain current (ID), and on-resistance (RDS(on)) at various gate-source voltages. For detailed electrical characteristics, thermal performance data, and application recommendations, consult the device's datasheet. Proper thermal management is essential to ensure reliable operation, especially at higher power levels. The device's low gate charge (Qg) contributes to its fast switching speeds and reduced gate drive requirements.

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