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Same model may have multiple batches, images only for reference.
FDT459N Real Image
Same model may have multiple batches, images only for reference.

FDT459N

Part No FDT459N
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 6.5A SOT-223
Datasheet
FDT459N Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 6.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 17nC @ 10V
Max Input Capacitance 365pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3W (Ta)
Maximum Rds On at Id,Vgs 35 mOhm @ 6.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-223-4
Dimension TO-261-4, TO-261AA
Win Source Part Number 1038460-FDT459N
Popularity Medium
Supply and Demand Status Balance
Quantity per package 4k pcs
Ultra Librarian 3D Model Ultra Librarian FDT459N CAD Model

Description

The FDT459N is an N-channel MOSFET designed and manufactured by Fairchild/ON Semiconductor.

  • Popularity: medium
  • Maximum Power Dissipation: 3W
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 6.5A @ 25°C
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Maximum Gate Charge: 17nC @ 10V
  • Maximum Input Capacitance: 365pF @ 15V
  • Maximum Rds On @ Id,Vgs: 35 mOhm @ 6.5A, 10V
  • Package: SOT-223-4
  • Temperature Range: -55°C to 150°C

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