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Same model may have multiple batches, images only for reference.
FDU068AN03L Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

FDU068AN03L

Part No FDU068AN03L
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 35A I-PAK
Datasheet
FDU068AN03L Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 17A (Ta), 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 60nC @ 10V
Max Input Capacitance 2525pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 80W (Tc)
Maximum Rds On at Id,Vgs 5.7 mOhm @ 35A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package IPAK (TO-251)
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 1038469-FDU068AN03L
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian FDU068AN03L CAD Model

Description

The Fairchild/ON Semiconductor MOSFET is a discrete semiconductor product that offers excellent performance and reliability.

  • Power Dissipation: 80W
  • Drain-Source Breakdown Voltage: 30V
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Maximum Gate Charge: 60nC @ 10V
  • Maximum Input Capacitance: 2525pF @ 15V
  • Maximum Gate-Source Voltage: ±20V
  • Supply and Demand Status: sufficient

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