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Same model may have multiple batches, images only for reference.
FDU6N25 Real Image
Same model may have multiple batches, images only for reference.

FDU6N25

Part No FDU6N25
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 250V 4.4A IPAK-3
Datasheet
FDU6N25 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 250V
Continuous Drain Current at 25°C 4.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 6nC @ 10V
Max Input Capacitance 250pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 50W (Tc)
Maximum Rds On at Id,Vgs 1.1 Ohm @ 2.2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package I-Pak
Dimension TO-251-3 Stub Leads, IPak
Win Source Part Number 1038477-FDU6N25
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 5,040
Ultra Librarian 3D Model Ultra Librarian FDU6N25 CAD Model

Description

The FDU6N25 MOSFET is a N-Channel MOSFET that has a drain-source breakdown voltage of 250V and a maximum continuous drain current of 4.4A @ 25°C (Tc).

  • Maximum Power Dissipation: 50W (Tc)
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Maximum Rds On @ Id,Vgs: 1.1 Ohm @ 2.2A, 10V
  • Package: I-Pak case
  • Mounting: Through hole
  • Supply and Demand Status: Sufficient
  • Quantity: 5,040 pcs per package

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Pricing & Ordering

Quantity Unit Price Ext. Price
210+ $0.2758 $57.9180
515+ $0.2264 $116.5960
790+ $0.2194 $173.3260
1,090+ $0.2122 $231.2980
1,410+ $0.2051 $289.1910
1,885+ $0.1839 $346.6515
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 32,600 pieces
MOQ: 210 pcs
Order Increment : 1 pcs
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