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Same model may have multiple batches, images only for reference.
FDU8870 Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

FDU8870

Part No FDU8870
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 160A I-PAK
Datasheet
FDU8870 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 21A (Ta), 160A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 118nC @ 10V
Max Input Capacitance 5160pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 160W (Tc)
Maximum Rds On at Id,Vgs 3.9 mOhm @ 35A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-251
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 1038485-FDU8870
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian FDU8870 CAD Model

Description

The Fairchild/ON Semiconductor FDU8870 is a MOSFET technology-based N-channel discrete semiconductor product.

  • Mounting Type: Through Hole
  • Package: TO-251 case/package
  • Power Dissipation (Max): 160W (Tc)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 21A (Ta), 160A (Tc)
  • Supply and Demand Status: sufficient

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