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Same model may have multiple batches, images only for reference.
FJN3313RTA Real Image
Same model may have multiple batches, images only for reference.

FJN3313RTA

Part No FJN3313RTA
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 300MW TO92-3 / Trans Digital BJT NPN 50V 100mA 3-Pin TO-92 Ammo
Datasheet
FJN3313RTA Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tape in Box
Part Status Obsolete(EOL)
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Maximum) 100mA
Voltage - Collector Emitter Breakdown (Maximum) 50V
Resistor - Base (R1) (Ohms) 2.2k
Resistor - Emitter Base (R2) (Ohms) 47k
DC Current Gain (hFE) (Minimum) @ Ic, Vce 68 @ 5mA, 5V
Vce Saturation (Maximum) @ Ib, Ic 300mV @ 500μA, 10mA
Current - Collector Cutoff (Maximum) 100nA (ICBO)
Frequency - Transition 250MHz
Power - Max 300mW
Mounting Style Through Hole
Package TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Manufacturer Package TO-92-3
Win Source Part Number 774594-FJN3313RTA
Popularity Medium
Supply and Demand Status Balance
Family Name FJN3313R
Introduction Date August 26, 2002
ECCN EAR99
Country of Origin China
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian FJN3313RTA CAD Model

Description

The Fairchild/ON Semiconductor FJN3313RTA is a transistor with a TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) package and a power of max 300mW.

  • Transistor Type: NPN - Pre-Biased
  • Frequency Transition: 250MHz
  • Manufacturer Package: TO-92-3
  • Current Collector (Ic) (Maximum): 100mA
  • Voltage Collector Emitter Breakdown (Maximum): 50V
  • Vce Saturation (Maximum) @ Ib, Ic: 300mV @ 500μA, 10mA
  • Current Collector Cutoff (Maximum): 100nA (ICBO)
  • DC Current Gain (hFE) (minimum) @ Ic, Vce: 68 @ 5mA, 5V

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