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Same model may have multiple batches, images only for reference.
FJV3107RMTF Real Image
Same model may have multiple batches, images only for reference.

FJV3107RMTF

Part No FJV3107RMTF
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 200MW SOT23-3
Datasheet
FJV3107RMTF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 22k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 68 @ 5mA, 5V
Max Vce (sat) 300mV @ 500μA, 10mA
Collector Cut-off Current(Max) 100nA (ICBO)
Frequency - Transition 250MHz
Maximum Power Dissipation 200mW
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Win Source Part Number 067248-FJV3107RMTF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FJV3107RMTF CAD Model

Description

The FJV3107RMTF is an NPN pre-biased bipolar junction transistor used in amplification and switching applications.

  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Maximum Current Collector: 100mA
  • Frequency Transition: 250MHz
  • Typical Gain (hFE): 68 @ 5mA, 5V
  • Maximum Power Dissipation: 200mW
  • Package: SOT-23-3 (TO-236)
  • Popularity: Medium
  • Supply and Demand: Balanced
  • Origin: China, India, Republic of Korea, United States of America

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180+ $1.9312 $347.6160
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