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Same model may have multiple batches, images only for reference.
FQA55N25 Real Image
Same model may have multiple batches, images only for reference.

FQA55N25

Part No FQA55N25
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 250V 55A 3-Pin(3+Tab) TO-3P Tube / MOSFET N-CH 250V 55A TO-3P
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 250V
Continuous Drain Current at 25°C 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 180nC @ 10V
Max Input Capacitance 6250pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 310W (Tc)
Maximum Rds On at Id,Vgs 40 mOhm @ 27.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-3PN
Dimension TO-3P-3, SC-65-3
Win Source Part Number 1039564-FQA55N25
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Quantity per package 450
Family Name FQA55N25
Introduction Date January 05, 2000
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian FQA55N25 CAD Model

Description

The Fairchild/ON Semiconductor FQA55N25 is an N-channel MOSFET designed for high power applications.

  • Drain-Source Breakdown Voltage: 250V
  • Continuous Drain Current: 55A @ 25°C
  • Maximum Rds On: 40 mOhm @ 27.5A and 10V
  • Supply and Demand Status: limited
  • Package: TO-3PN
  • Quantity per Package: 450 pieces

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Pricing & Ordering

Quantity Unit Price Ext. Price
10+ $6.2566 $62.5660
23+ $5.1340 $118.0820
35+ $4.9734 $174.0690
48+ $4.8129 $231.0192
63+ $4.6523 $293.0949
84+ $4.1719 $350.4396
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 94 pieces
MOQ: 10 pcs
Order Increment : 1 pcs
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