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Same model may have multiple batches, images only for reference.
FQA6N80 Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

FQA6N80

Part No FQA6N80
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V 6.3A TO-3P
Datasheet
FQA6N80 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 800V
Continuous Drain Current at 25°C 6.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 31nC @ 10V
Max Input Capacitance 1500pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 185W (Tc)
Maximum Rds On at Id,Vgs 1.95 Ohm @ 3.15A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-3P
Dimension TO-3P-3, SC-65-3
Win Source Part Number 136249-FQA6N80
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian FQA6N80 CAD Model

Description

The Fairchild/ON Semiconductor FQA6N80 is a medium-popularity electronic component.

  • Polarity: N-Channel MOSFET
  • Power Dissipation: 185W (Tc)
  • Maximum Rds on at Id, Vgs: 1.95 Ohm @ 3.15A, 10V
  • Drain-Source Breakdown Voltage: 800V
  • Continuous Drain Current: 6.3A (Tc) @ 25°C
  • Status: Obsolete (EOL)
  • Supply and Demand Status: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.6898 $59.1430
85+ $1.3860 $117.8100
130+ $1.3433 $174.6290
180+ $1.2994 $233.8920
230+ $1.2566 $289.0180
310+ $1.1261 $349.0910
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,000 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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