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Same model may have multiple batches, images only for reference.
FQA70N10 Real Image
Same model may have multiple batches, images only for reference.

FQA70N10

Part No FQA70N10
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 70A TO-3P
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 110nC @ 10V
Max Input Capacitance 3300pF @ 25V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 214W (Tc)
Maximum Rds On at Id,Vgs 23 mOhm @ 35A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-3PN
Dimension TO-3P-3, SC-65-3
Win Source Part Number 040328-FQA70N10
Popularity Medium
Supply and Demand Status Limited
Quantity per package 450
Ultra Librarian 3D Model Ultra Librarian FQA70N10 CAD Model

Description

The Fairchild/ON Semiconductor FQA70N10 is a N-Channel MOSFET transistor.

  • Power Dissipation: 214W (Tc)
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 70A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Rds On at Id,Vgs: 23 mOhm @ 35A, 10V
  • Mounting: Through Hole
  • Package: TO-3PN
  • Drive Voltage: 10V
  • Maximum Gate-Source Voltage: ±25V
  • Maximum Input Capacitance: 3300pF @ 25V
  • Maximum Gate Charge: 110nC @ 10V
  • Operating Temperature: -55°C to 175°C (TJ)
  • Supply and Demand Status: Limited
  • Quantity per Package: 450

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Quantity Unit Price Ext. Price
35+ $1.4845 $51.9575
85+ $1.2180 $103.5300
130+ $1.1800 $153.4000
180+ $1.1419 $205.5420
230+ $1.1038 $253.8740
305+ $0.9897 $301.8585
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Availability: 12,000 pieces
MOQ: 35 pcs
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