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Same model may have multiple batches, images only for reference.
FQB12P10TM Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

FQB12P10TM

Part No FQB12P10TM
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 100V 11.5A D2PAK / Trans MOSFET P-CH 100V 11.5A 3-Pin(2+Tab) D2PAK T/R
Datasheet
FQB12P10TM Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Series QFET
Packaging Reel package
Part Status Obsolete(EOL)
Channel Type Type P
Technology MOSFET
Drain Source Voltage 100V
Current - Continuous Drain (Id) @ 25°C 11.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 27nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 800pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 3.75W (Ta), 75W (Tc)
Rds On (Maximum) @ Id, Vgs 290 mOhm @ 5.75A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting SMD
Manufacturer Package D2PAK (TO-263AB)
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 774710-FQB12P10TM
Popularity Medium
Supply and Demand Status Balance
Family Name FQB12P10
Introduction Date August 26, 2002
ECCN EAR99
Country of Origin China
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian FQB12P10TM CAD Model

Description

The Fairchild/ON Semiconductor FQB12P10TM is a P-channel MOSFET that has a maximum power dissipation of 3.75W (Ta), 75W (Tc).

  • Gate Charge (Qg): 27nC @ 10V
  • Input Capacitance (Ciss): 800pF @ 25V
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Mounting Type: SMD
  • Family: FQB12P10
  • Category: Discrete Semiconductor Products
  • Status: Obsolete, Balanced Supply and Demand
  • EOL Date: Estimated

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