The FQB19N20C is an N-Channel MOSFET from Fairchild Semiconductor (now ON Semiconductor), designed for power switching applications requiring high voltage and efficient performance. This MOSFET utilizes advanced planar stripe, DMOS technology and robust avalanche energy, providing excellent RDS(ON), low gate charge, and superior switching performance.

Applications

• Switch Mode Power Supplies (SMPS): Used in primary switching circuits for efficient power conversion.
• Power Factor Correction (PFC): Suitable for active PFC circuits to improve power efficiency and reduce harmonic distortion.
• Uninterruptible Power Supplies (UPS): Employed in UPS systems for battery charging and inverter applications.
• DC-DC Converters: Utilized in various DC-DC converters for voltage regulation and power management.
• Motor Control: Used in PWM motor control for brushed DC motors, stepper motors and BLDC motors.

Features

• High Voltage Capability: Operates with a drain-source voltage (Vds) of up to 200V.
• Low On-Resistance: Features a low RDS(on) to minimize conduction losses and improve efficiency.
• Fast Switching Speed: Offers fast switching characteristics for reduced switching losses and improved efficiency.
• Avalanche Ruggedness: Designed with high avalanche energy capability for reliable operation.
• Low Gate Charge: Low gate charge reduces drive power requirements and improves switching performance.
• TO-263 Package: Housed in a TO-263 package for efficient heat dissipation and surface mount capabilities.

Benefits

• Improved Efficiency: Low on-resistance minimizes power dissipation, leading to higher energy efficiency.
• Reliable Operation: Avalanche ruggedness provides protection against voltage transients, ensuring reliable operation in demanding environments.
• Reduced Switching Losses: Fast switching speed minimizes switching losses, further improving overall system efficiency.
• Simplified Design: Low gate charge reduces the requirements of the gate drive circuitry, leading to simpler and cost-effective designs.
• Compact Size: TO-263 package allows for efficient thermal management and space saving design.

Additional Details

The FQB19N20C has a continuous drain current (Id) rating of 19A. The gate-source voltage (Vgs) is rated at ±30V. The MOSFET has a typical gate charge (Qg) of around 50 nC. The device's RDS(on) is typically around 0.1 ohms at Vgs = 10V. The operating junction temperature ranges from -55°C to +175°C. This MOSFET is suitable for applications that require high power density, efficiency, and reliability. The FQB19N20C is often used in synchronous rectification applications due to its low on-resistance and fast switching characteristics. This helps minimize conduction losses and improve the overall efficiency of power conversion systems. Its robust design ensures reliable operation in demanding environments and its compact TO-263 package allows for efficient thermal management and space-saving designs.