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FQB22P10

Part No FQB22P10
Manufacturer Fairchild/ON Semiconductor
Description 100V P-Channel MOSFET
Sample
Rohs State rohs
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Manufacturer Fairchild/ON Semiconductor
Win Source Part Number 1175230-FQB22P10
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FQB22P10 CAD Model

Description

The FQB22P10 is a P-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for switching and power management applications. Manufactured by Fairchild/ON Semiconductor, this MOSFET offers low on-resistance (Rds(on)) and is suitable for applications requiring load switching, power control, and high-side switching. It is commonly used in DC-DC converters, power supplies, and motor control circuits.

Applications

  • DC-DC Converters: Used as a switching element in DC-DC converters.
  • Power Supplies: Implemented in power supplies for various electronic devices.
  • Motor Control: Provides switching for controlling the speed and direction of motors.
  • Load Switching: Controls power to various loads in electronic circuits.
  • High-Side Switching: Used for switching power on the high side of a circuit.

Features

  • Low On-Resistance (Rds(on)): Reduces power losses during conduction.
  • Fast Switching Speed: Enables efficient switching operation.
  • High Gate-Source Voltage (Vgs): Offers a wide operating range for gate drive signals.
  • Avalanche Rated: Designed to withstand high-energy pulses in inductive switching applications.
  • Lead-Free Package: Compliant with environmental standards.

Benefits

  • Improved Efficiency: Reduces power dissipation and enhances the efficiency of power circuits.
  • Reduced Heat Dissipation: Low on-resistance minimizes heat generation.
  • Simplified Design: Fast switching simplifies the design of switching circuits.
  • Enhanced System Reliability: Avalanche rating provides protection against voltage spikes.
  • Environmentally Friendly: Lead-free construction is environmentally sound.

Additional Details

The FQB22P10 is a P-channel enhancement mode MOSFET. It has a drain-source voltage (Vds) rating of -100V and a continuous drain current (Id) rating of -22A. Its low on-resistance (Rds(on)) minimizes conduction losses. The device is available in a through-hole or surface-mount package. It requires a negative gate-source voltage (Vgs) to turn on. The gate threshold voltage (Vgs(th)) is the voltage required to start conduction. Proper gate drive is essential for optimal performance. Always refer to the datasheet for detailed specifications and application guidelines.

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Pricing & Ordering

Quantity Unit Price Ext. Price
18+ $3.7657 $67.7826
42+ $3.0904 $129.7968
65+ $2.9934 $194.5710
90+ $2.8963 $260.6670
116+ $2.8007 $324.8812
155+ $2.5109 $389.1895
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 25,000 pieces
MOQ: 18 pcs
Order Increment : 1 pcs
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