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Same model may have multiple batches, images only for reference.
FQB2P25TM Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

FQB2P25TM

Part No FQB2P25TM
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 250V 2.3A D2PAK
Datasheet
FQB2P25TM Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 250V
Continuous Drain Current at 25°C 2.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 8.5nC @ 10V
Max Input Capacitance 250pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 3.13W (Ta), 52W (Tc)
Maximum Rds On at Id,Vgs 4 Ohm @ 1.15A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (TO-263AB)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 040335-FQB2P25TM
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FQB2P25TM CAD Model

Description

The Fairchild/ON Semiconductor FQB2P25TM is a P-channel MOSFET.

  • Drain-Source Breakdown Voltage: 250V
  • Continuous Drain Current: 2.3A (Tc)
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Maximum Gate Charge: 8.5nC @ 10V
  • Maximum Input Capacitance: 250pF @ 25V
  • Maximum Rds On: 4 Ohm @ 1.15A, 10V
  • Package: D2PAK (TO-263AB)
  • Popularity: Medium
  • Status: Obsolete (EOL)
  • Supply and Demand: Balanced

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