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Same model may have multiple batches, images only for reference.
FQB4P40TM Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

FQB4P40TM

Part No FQB4P40TM
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description 400V P-Channel MOSFET
Datasheet
FQB4P40TM Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Series QFET
Packaging Reel - TR
Part Status Obsolete(EOL)
Channel Type Type P
Technology MOSFET
Drain Source Voltage 400V
Current - Continuous Drain (Id) @ 25°C 3.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 23nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 680pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 3.13W (Ta), 85W (Tc)
Rds On (Maximum) @ Id, Vgs 3.1 Ohm @ 1.75A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package D2PAK (TO-263AB)
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1175252-FQB4P40TM
Manufacturer Homepage www.fairchildsemi.com
Family Name FQB4P40
Introduction Date September 19, 2000
ECCN EAR99
Country of Origin China
Estimated EOL Date Obsolete
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FQB4P40TM CAD Model

Description

The FQB4P40TM is an N-channel MOSFET transistor that can operate at a maximum drain-source voltage of 400V and a continuous drain current of 3.5A.

  • Rds On: 3.1 Ohm @ 1.75A and 10V
  • Gate Charge: 23nC @ 10V
  • Input Capacitance: 680pF @ 25V
  • Maximum Power Dissipation: 3.13W @ Ta and 85W @ Tc
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Series: QFET
  • Application: Industrial
  • Maximum Frequency: 200MHz
  • Status: Obsolete
  • Estimated EOL Date: Passed

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