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FQB6N40C

Part No FQB6N40C
Manufacturer Fairchild/ON Semiconductor
Description 400V N-Channel MOSFET
Sample
Rohs State Need to verify
ECAD Module
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RoHS State Request Verification
Manufacturer Fairchild/ON Semiconductor
Win Source Part Number 1175264-FQB6N40C
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian FQB6N40C CAD Model

Description

The FQB6N40C is an N-Channel MOSFET from Fairchild/ON Semiconductor. It's designed for high-voltage, high-speed switching applications, offering a good balance of on-resistance and gate charge.

Applications:

  • Switch Mode Power Supplies (SMPS): Employed in SMPS circuits for various electronic devices.
  • Power Factor Correction (PFC): Used in PFC circuits to improve power efficiency.
  • Lighting Ballasts: Suitable for electronic ballasts in lighting systems.
  • Motor Control: Used in motor control circuits.
  • Uninterruptible Power Supplies (UPS): Used in UPS systems for reliable power switching.

Features:

  • High Voltage Rating: 400V drain-source voltage (VDS) rating.
  • Low On-Resistance: Minimizes conduction losses, improving efficiency.
  • Fast Switching Speed: Reduces switching losses.
  • Avalanche Ruggedness: Enhanced reliability under transient conditions.
  • TO-263 Package: Surface mount package for efficient thermal management.

Benefits:

  • High Efficiency: Reduces power losses.
  • Improved Reliability: Enhanced protection against voltage transients.
  • Simplified Thermal Management: Facilitates heatsinking.
  • Reduced Component Count: High voltage and current handling.
  • Enhanced System Performance: Enables higher operating frequencies.

Additional Details:

The FQB6N40C features a continuous drain current (ID) of 6.1A. The gate-source voltage (VGS) is rated at ±30V. It comes in a TO-263 (D2PAK) package suitable for surface mounting. The device is lead-free and RoHS compliant. The gate threshold voltage (VGS(th)) typically falls between 2V and 4V. Its avalanche ruggedness makes it more resistant to damage from voltage spikes. The low on-resistance of this MOSFET helps to improve overall system efficiency. The FQB6N40C is a versatile MOSFET suitable for a wide range of power electronics applications, particularly where high voltage and fast switching speeds are required.

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