The FQB6N70 is a 700V N-Channel MOSFET utilizing Fairchild's advanced QFET® technology. This component is engineered for high-voltage, high-speed switching applications, offering low on-state resistance and superior switching performance. It's capable of withstanding high energy pulses in both avalanche and commutation modes, making it a reliable choice for demanding power electronics applications.

Applications

• Switched-Mode Power Supplies (SMPS)
• Power Factor Correction (PFC)
• Lighting Ballasts
• High-Voltage Inverters
• Uninterruptible Power Supplies (UPS)

Features

• RDS(on) = 1.9 Ω (Typ.) @ VGS = 10V, ID = 3A
• Low gate charge (typical 14 nC)
• Low Crss (typical 3.5 pF)
• High ruggedness
• 100% avalanche tested

Benefits

• High efficiency reduces power losses
• Fast switching speeds enhance system performance
• Robustness ensures reliable operation in harsh environments
• Simplified thermal management

Additional Details

The FQB6N70 is an N-channel enhancement mode MOSFET packaged in a TO-263 (D2PAK) package designed for surface mounting. It features a continuous drain current of 6A and a pulsed drain current of 18A. The gate-source voltage is rated at ±30V. The device is designed for operation at junction temperatures up to 150°C. The low on-resistance minimizes conduction losses, improving overall efficiency. The fast switching speed reduces switching losses, enabling higher frequency operation. The 100% avalanche testing guarantees the device's ability to withstand transient voltage spikes. The TO-263 package facilitates efficient heat dissipation. The FQB6N70 is a robust and efficient choice for high-voltage switching applications demanding reliability and performance.