The FQB6N90 is an N-Channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Fairchild Semiconductor, now part of ON Semiconductor. It is designed for high-voltage, high-speed switching applications.

Applications

• Power supplies
• AC-DC converters
• High-voltage inverters
• Power factor correction (PFC) circuits
• Lighting ballasts

Features

• N-Channel MOSFET
• 6A continuous drain current
• 900V drain-source voltage
• Low gate charge
• High speed switching
• Avalanche rated

Benefits

• High voltage operation capability
• Reduced switching losses due to low gate charge
• Efficient operation in high-frequency circuits
• Robust performance under high-voltage conditions
• Simplified thermal management
• Reliable operation

Technical Specifications

The FQB6N90 features a drain-source voltage (VDS) of 900V and a continuous drain current (ID) of 6A. It has a low gate charge (Qg), which contributes to faster switching speeds and reduced switching losses. The avalanche rating provides robust performance under transient voltage conditions. The on-resistance (RDS(on)) is optimized for efficient power conversion. The gate threshold voltage (VGS(th)) is typically between 3V and 5V. It is generally supplied in a TO-220 package, facilitating heat dissipation. This MOSFET is designed to operate over a wide temperature range. The device is RoHS compliant. The fast switching characteristics contribute to improved efficiency in power electronic circuits. The high breakdown voltage makes it suitable for applications where high voltage surges are a concern.

The FQB6N90 is a suitable selection for applications that require high-voltage switching, such as power supplies and inverters. Its characteristics make it a reliable component for power electronics applications.