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Same model may have multiple batches, images only for reference.
FQB7N60TM Real Image
Same model may have multiple batches, images only for reference.

FQB7N60TM

Part No FQB7N60TM
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 7.4A D2PAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 7.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 38nC @ 10V
Max Input Capacitance 1430pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 3.13W (Ta), 142W (Tc)
Maximum Rds On at Id,Vgs 1 Ohm @ 3.7A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (TO-263AB)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 016423-FQB7N60TM
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 800
Ultra Librarian 3D Model Ultra Librarian FQB7N60TM CAD Model

Description

The Fairchild/ON Semiconductor MOSFET is a high-performance component used for voltage regulation in electronic devices.

  • Power Dissipation: 3.13W
  • Drain-Source Breakdown Voltage: 600V
  • Popularity: Medium
  • Supply and Demand: Sufficient
  • Package: D2PAK (TO-263AB)
  • Mounting: SMD (SMT)
  • Gate-Source Voltage: +/-30V
  • Package Quantity: 800 pcs

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