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FQD1N50TM

Part No FQD1N50TM
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 1.1A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 1.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 5.5nC @ 10V
Max Input Capacitance 150pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 2.5W (Ta), 25W (Tc)
Maximum Rds On at Id,Vgs 9 Ohm @ 550mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1039704-FQD1N50TM
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FQD1N50TM CAD Model

Description

The FQD1N50TM is a N-Channel MOSFET from Fairchild/ON Semiconductor. It is designed for high voltage, high-speed power switching applications. This MOSFET utilizes advanced technology to provide efficient performance, low gate charge, and fast switching speeds.

Applications:

  • Power Supplies: Used in switched-mode power supplies (SMPS) for computers, servers, and other electronic devices.
  • Motor Control: Employed in motor control circuits for various applications, including industrial and automotive systems.
  • Lighting Ballasts: Integrated into electronic ballasts for fluorescent and LED lighting systems.
  • DC-DC Converters: Utilized in DC-DC converters for efficient voltage regulation.
  • Uninterruptible Power Supplies (UPS): Found in UPS systems to provide backup power during outages.

Features:

  • N-Channel MOSFET: Offers efficient current conduction and switching capabilities.
  • High Voltage Rating: Rated for 500V drain-source voltage (VDS).
  • Low On-Resistance: Features a low RDS(on) to minimize power losses during conduction.
  • Fast Switching Speed: Provides quick turn-on and turn-off times for efficient operation.
  • Avalanche Rated: Designed to withstand avalanche conditions, enhancing reliability.

Benefits:

  • High Efficiency: Minimizes power losses and improves overall system efficiency.
  • Reliable Performance: Offers stable and reliable performance in demanding applications.
  • Simplified Design: Reduces the need for complex circuitry, simplifying design efforts.
  • Reduced Heat Dissipation: Low on-resistance results in lower heat generation.
  • Enhanced System Protection: Avalanche rating provides additional protection against voltage transients.

Additional Details:

The FQD1N50TM has a continuous drain current (ID) of 1A and a pulsed drain current (IDM) of 3A. It comes in a DPAK (TO-252) package, which is suitable for surface mounting. The gate-source voltage (VGS) is rated at ±30V. This MOSFET is designed for applications requiring high voltage operation, efficient power switching, and reliable performance.

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