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Same model may have multiple batches, images only for reference.
FQD24N08TF Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

FQD24N08TF

Part No FQD24N08TF
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 80V 19.6A DPAK
Datasheet
FQD24N08TF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 80V
Continuous Drain Current at 25°C 19.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 25nC @ 10V
Max Input Capacitance 750pF @ 25V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 2.5W (Ta), 50W (Tc)
Maximum Rds On at Id,Vgs 60 mOhm @ 9.8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 067400-FQD24N08TF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FQD24N08TF CAD Model

Description

The Fairchild/ON Semiconductor 067400-FQD24N08TF is an obsolete (EOL) N-Channel MOSFET.

  • Polarity: N-Channel
  • Technology: MOSFET
  • Package: D-Pak (TO-252-3, DPak (2 Leads + Tab), SC-63)
  • Drain-Source Breakdown Voltage: 80V
  • Continuous Drain Current: 19.6A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Max Gate Charge: 25nC @ 10V
  • Maximum Rds On: 60 mOhm @ 9.8A, 10V
  • Alternative Parts: FQD24N08TM, FQD24N08, FQD24N08TF, FDD3690_NF40
  • Supply and Demand: Balanced

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41+ $8.6440 $354.4040
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