The FQD2N100 is an N-Channel enhancement mode MOSFET from Fairchild/ON Semiconductor. This high-voltage power MOSFET is designed for applications requiring high breakdown voltage and efficient power switching. Its robust construction and high voltage rating make it suitable for demanding power electronics applications.

Applications:

• Switch Mode Power Supplies (SMPS)
• High voltage converters
• Power Factor Correction (PFC)
• Lighting ballasts
• Plasma displays

Features:

• N-Channel enhancement mode MOSFET
• High voltage capability (1000V)
• Low on-resistance (RDS(on))
• Fast switching speed
• Avalanche energy rated

Benefits:

• High efficiency in high-voltage power conversion
• Reduced heat dissipation due to low RDS(on)
• Increased system reliability with high voltage capability
• Simplified design due to ease of use
• Suitable for high-voltage applications

Additional Details:

The FQD2N100 features a drain-source voltage (VDS) of 1000V and a continuous drain current (ID) of 2A. Its low gate charge contributes to minimized switching losses. The device is typically available in a TO-251 (IPA) or TO-252 (DPAK) package. It is designed to meet RoHS compliance standards.