The FQD2N60 is a QFET® MOSFET from Fairchild Semiconductor (now ON Semiconductor). It's an N-channel enhancement mode power MOSFET produced using advanced planar stripe and DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Applications

• Power supplies
• Adapters
• Lighting ballasts
• DC-DC converters

Features

• Low on-resistance (RDS(on))
• Low gate charge (Qg)
• High avalanche energy capability
• High ruggedness
• Fast switching

Benefits

• Increased energy efficiency in power conversion applications due to low RDS(on).
• Reduced switching losses because of low gate charge.
• Improved system reliability due to high avalanche energy capability and ruggedness.
• Higher power density achievable due to its efficient performance.

Additional Details

The FQD2N60 is designed for use in applications where power efficiency and reliability are critical. Its specifications include a drain-source voltage (VDS) of 600V, a continuous drain current (ID) of 2A, and an RDS(on) of typically 4.5 Ohms. The device is typically available in a TO-251 or TO-252 package. Its fast switching speed makes it suitable for high-frequency applications. The QFET® technology ensures a robust and reliable performance under various operating conditions.