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Same model may have multiple batches, images only for reference.
MX0912B351Y NXP
Same model may have multiple batches, images only for reference.

MX0912B351Y

Part No MX0912B351Y
Manufacturer Ampleon USA Inc.
Catalog RF Transistors (BJT)
Description RF POWER BIPOLAR TRANSISTOR, 1-E
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar RF Transistors
Mfr Ampleon USA Inc.
Package Bulk
Product Status Active
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 20V
Frequency - Transition 1.215GHz
Gain 8dB
Power - Max 960W
Current - Collector (Ic) (Max) 21A
Temperature Range - Operating 200°C (TJ)
Mounting Type Chassis Mount
Package / Case SOT-439A
Supplier Device Package CDFM2
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 646055-MX0912B351Y
Ultra Librarian 3D Model Ultra Librarian MX0912B351Y CAD Model

Description

The MX0912B351Y is a bipolar RF transistor designed for use in discrete semiconductor products. Manufactured by Ampleon USA Inc., this transistor offers high power handling capabilities with a maximum power of 960W.

  • Power: 960W
  • Voltage Breakdown: 20V
  • Maximum Collector Current: 21A
  • Transistor Type: NPN
  • Gain: 8dB
  • Mounting Type: Chassis Mount
  • Package: SOT-439A
  • Temperature Range: 200°C
  • ECCN: Compliant
  • Product Status: Active

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