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Same model may have multiple batches, images only for reference.
FQD5N50CTM Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

FQD5N50CTM

Part No FQD5N50CTM
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 4A DPAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Fairchild/ON Semiconductor
Series QFET®
Package Bulk
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.4Ohm @ 2A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 24 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 625 pF @ 25 V
Power Dissipation (Max) 2.5W (Ta), 48W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252, (D-Pak)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Standard Package 544 pcs
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 132498-FQD5N50CTM
Ultra Librarian 3D Model Ultra Librarian FQD5N50CTM CAD Model

Description

The QFET™ 132498-FQD5N50CTM is a N-Channel MOSFET designed for high voltage applications.

  • Channel Type: N-Channel
  • Drain to Source Voltage (Vdss): 500 V
  • Continuous Drain Current (Id): 4A at 25°C
  • Maximum On-Resistance (Rds On): 1.4Ohm at 2A and 10V
  • Gate Charge (Qg): 24 nC at 10V
  • Input Capacitance (Ciss): 625 pF at 25V
  • Mounting Type: Surface Mount
  • Package: TO-252-3 (D-Pak)
  • Operating Temperature: -55°C to 150°C
  • Status: Obsolete

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