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Same model may have multiple batches, images only for reference.
FQD7N10LTM Real Image
Same model may have multiple batches, images only for reference.

FQD7N10LTM

Part No FQD7N10LTM
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 5.8A DPAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 5.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 6nC @ 5V
Max Input Capacitance 290pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta), 25W (Tc)
Maximum Rds On at Id,Vgs 350 mOhm @ 2.9A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 016443-FQD7N10LTM
Popularity Medium
Supply and Demand Status Balance
Quantity per package 2,500
Ultra Librarian 3D Model Ultra Librarian FQD7N10LTM CAD Model

Description

The FQD7N10LTM is a N-Channel MOSFET manufactured by Fairchild/ON Semiconductor.

  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current (Tc=25°C): 5.8A
  • Maximum Rds On (Id=2.9A, Vgs=10V): 350 mOhm
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Input Capacitance (Vds=25V): 290pF
  • Maximum Gate Charge (Vgs=5V): 6nC
  • Gate-Source Threshold Voltage (Id=250μA): 2V
  • Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
  • Drive Voltage: 5V, 10V
  • Technology: MOSFET
  • Case: D-Pak (TO-252-3, DPak (2 Leads + Tab), SC-63)
  • Application: Discrete Semiconductor Products
  • Lifecycle Status: Active

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235+ $0.4980 $117.0300
360+ $0.4826 $173.7360
495+ $0.4670 $231.1650
640+ $0.4514 $288.8960
860+ $0.4047 $348.0420
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