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FQD7N30TF

Part No FQD7N30TF
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 300V 5.5A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 300V
Continuous Drain Current at 25°C 5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 17nC @ 10V
Max Input Capacitance 610pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 2.5W (Ta), 50W (Tc)
Maximum Rds On at Id,Vgs 700 mOhm @ 2.75A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1039775-FQD7N30TF
Popularity Medium
Supply and Demand Status Balance
Quantity per package 2k pcs
Ultra Librarian 3D Model Ultra Librarian FQD7N30TF CAD Model

Description

The FQD7N30TF is an N-Channel MOSFET that is designed for discrete semiconductor products.

  • Power Dissipation: 2.5W (Ta), 50W (Tc)
  • Drive Voltage: 10V
  • Status: obsolete(EOL)
  • Mounting Type: surface-mount device (SMD)
  • Drain-Source Breakdown Voltage: 300V
  • Continuous Drain Current: 5.5A (Tc)
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Maximum Gate Charge: 17nC @ 10V
  • Maximum Input Capacitance: 610pF @ 25V
  • Maximum Gate-Source Voltage: ±30V

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.9513 $61.8345
150+ $0.7805 $117.0750
230+ $0.7562 $173.9260
320+ $0.7318 $234.1760
410+ $0.7075 $290.0750
550+ $0.6342 $348.8100
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,000 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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