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FQI12N60TU

Part No FQI12N60TU
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 10.5A I2PAK / Trans MOSFET N-CH 600V 10.5A 3-Pin(3+Tab) I2PAK Rail
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Series QFET
Packaging Tube
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 600V
Current - Continuous Drain (Id) @ 25°C 10.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 54nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 1900pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 3.13W (Ta), 180W (Tc)
Rds On (Maximum) @ Id, Vgs 700 mOhm @ 5.3A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package I2PAK
Package TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 774737-FQI12N60TU
Popularity Medium
Supply and Demand Status Limited
Family Name FQI12N60
Introduction Date May 16, 2000
ECCN EAR99
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian FQI12N60TU CAD Model

Description

The FQI12N60TU is a MOSFET technology-based QFET from Fairchild/ON Semiconductor.

  • Channel Type: N
  • Drain-Source Voltage: 600V
  • Status: Obsolete (EOL)
  • Introduction Date: May 16, 2000
  • Maximum Power Dissipation: 3.13W (Ta), 180W (Tc)
  • Maximum Rds On: 700 mOhm @ 5.3A, 10V
  • Package: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Mounting Style: Through-hole
  • Gate Charge (Qg) (Maximum) @ Vgs: 54nC @ 10V
  • Input Capacitance (Ciss) (Maximum) @ Vds: 1900pF @ 25V

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.9178 $57.5340
65+ $1.5736 $102.2840
100+ $1.5244 $152.4400
140+ $1.4752 $206.5280
180+ $1.4261 $256.6980
235+ $1.2786 $300.4710
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,000 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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