The FQI13N50C is an N-Channel enhancement mode power MOSFET from Fairchild Semiconductor (now ON Semiconductor). It is designed for high-voltage, high-speed switching applications, providing excellent performance in terms of low on-resistance and fast switching.

Applications

• Power supplies
• Motor control
• Lighting ballasts
• DC-DC converters
• Inverters

Features

• N-Channel enhancement mode MOSFET
• High voltage capability (VDS = 500V)
• Low on-resistance (RDS(on))
• Fast switching speed
• Avalanche energy rated

Benefits

• High efficiency in power conversion
• Reduced power losses and heat generation
• Improved system reliability
• Simplified thermal management

Specifications

The FQI13N50C features a drain-source voltage (VDS) of 500V, a gate-source voltage (VGS) of ±30V, and a continuous drain current (ID) of 13A. The on-resistance (RDS(on)) is typically 0.4 Ohms at VGS = 10V. It is available in a TO-220 package, which is suitable for through-hole mounting and provides efficient heat dissipation. This MOSFET is designed to operate reliably under high-voltage and high-frequency conditions. The avalanche energy rating ensures robustness against transient voltage spikes, contributing to the overall reliability of the application.