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FQI13N50CTU

Part No FQI13N50CTU
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 13A I2PAK
Sample
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 56nC @ 10V
Max Input Capacitance 2055pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 195W (Tc)
Maximum Rds On at Id,Vgs 480 mOhm @ 6.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package I2PAK
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 040339-FQI13N50CTU
Popularity Medium
Supply and Demand Status Balance
Quantity per package 1k pcs
Ultra Librarian 3D Model Ultra Librarian FQI13N50CTU CAD Model

Description

The FQI13N50CTU is an N-Channel MOSFET from Fairchild/ON Semiconductor. It is designed for through-hole mounting.

  • Drain-Source Breakdown Voltage: 500V
  • Continuous Drain Current: 13A at 25°C
  • Gate-Source Threshold Voltage: 4V at 250μA
  • Maximum Input Capacitance: 2055pF at 25V
  • Maximum Gate-Source Voltage: ±30V
  • Operating Temperature: -55°C to 150°C
  • Power Dissipation: 195W (Tc)
  • Package: I2PAK (TO-262-3 Long Leads, I2Pak, TO-262AA)
  • Category: Discrete Semiconductor Products
  • Packaging Quantity: 1k pcs per package

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Pricing & Ordering

Quantity Unit Price Ext. Price
24+ $2.4359 $58.4616
58+ $1.9993 $115.9594
90+ $1.9369 $174.3210
124+ $1.8746 $232.4504
160+ $1.8122 $289.9520
214+ $1.6239 $347.5146
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,000 pieces
MOQ: 24 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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