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Same model may have multiple batches, images only for reference.
FQI3N30TU Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

FQI3N30TU

Part No FQI3N30TU
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 300V 3.2A I2PAK / Trans MOSFET N-CH 300V 3.2A 3-Pin(3+Tab) I2PAK T/R
Datasheet
FQI3N30TU Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Series QFET
Packaging Tube
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 300V
Current - Continuous Drain (Id) @ 25°C 3.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 7nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 230pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 3.13W (Ta), 55W (Tc)
Rds On (Maximum) @ Id, Vgs 2.2 Ohm @ 1.6A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package I2PAK
Package TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 774742-FQI3N30TU
Popularity Medium
Supply and Demand Status Limited
Family Name FQI3N30
Introduction Date May 16, 2000
ECCN EAR99
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian FQI3N30TU CAD Model

Description

The FQI3N30TU is a N-channel MOSFET transistor from Fairchild/ON Semiconductor.

  • Drain-Source Voltage: 300V
  • Continuous Drain Current @ 25°C: 3.2A
  • Series: QFET
  • Package: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Mounting: Through-hole
  • Gate Charge (Qg): 7nC @ 10V
  • Input Capacitance (Ciss): 230pF @ 25V
  • Status: Obsolete (EOL)
  • EOL Date: Estimated EOL date

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