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FQI3N90TU

Part No FQI3N90TU
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description 900V N-Channel MOSFET
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Series QFET
Packaging Tube
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 900V
Current - Continuous Drain (Id) @ 25°C 3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 26nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 910pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 3.13W (Ta), 130W (Tc)
Rds On (Maximum) @ Id, Vgs 4.25 Ohm @ 1.8A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package I2PAK
Package TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 1175392-FQI3N90TU
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Limited
Family Name FQI3N90
Introduction Date October 12, 2000
ECCN EAR99
Country of Origin China
Estimated EOL Date Obsolete
Ultra Librarian 3D Model Ultra Librarian FQI3N90TU CAD Model

Description

The FQI3N90TU is a N-Channel MOSFET produced by Fairchild/ON Semiconductor. It's designed for high voltage, high-speed switching applications. MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) are widely used in power electronics due to their ability to efficiently control large currents with a relatively small gate voltage.

Applications:

  • Switch-mode power supplies (SMPS): Used as the primary switching element in various SMPS topologies.
  • Power factor correction (PFC) circuits: Improves the efficiency and power quality of AC-DC power supplies.
  • Uninterruptible power supplies (UPS): Ensures continuous power delivery during power outages.
  • DC-DC converters: Efficiently converts DC voltage levels in various electronic devices.
  • Motor control: Used in inverter circuits for controlling electric motors.

Features:

  • High voltage capability: Withstands high drain-source voltages, suitable for high voltage applications.
  • Low on-resistance (RDS(on)): Minimizes power dissipation and improves efficiency.
  • Fast switching speed: Enables high-frequency operation in switching applications.
  • Avalanche energy rated: Withstands avalanche breakdown, enhancing reliability.
  • Gate charge optimized: Reduces switching losses and improves efficiency.
  • Lead-free package: Complies with environmental regulations.

Benefits:

  • High efficiency: Low RDS(on) minimizes power losses, leading to improved efficiency.
  • Reliable operation: Avalanche energy rating ensures robust performance under stress conditions.
  • Compact design: Enables smaller and lighter power supply designs.
  • Reduced heat dissipation: Low RDS(on) reduces heat generation, simplifying thermal management.
  • Improved power quality: Facilitates power factor correction and reduces harmonic distortion.

Technical Specifications:

The FQI3N90TU typically features a drain-source voltage (VDS) rating of 900V, a continuous drain current (ID) rating of around 3A, and a low on-resistance (RDS(on)). Please refer to the Fairchild/ON Semiconductor datasheet for the FQI3N90TU for the complete and most accurate specifications, including gate charge (Qg), input capacitance (Ciss), and output capacitance (Coss). The datasheet also provides detailed information on thermal resistance and safe operating area.

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