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Same model may have multiple batches, images only for reference.
FQI5N50CTU Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

FQI5N50CTU

Part No FQI5N50CTU
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 5A I2PAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 24nC @ 10V
Max Input Capacitance 625pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 73W (Tc)
Maximum Rds On at Id,Vgs 1.4 Ohm @ 2.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package I2PAK
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 040342-FQI5N50CTU
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FQI5N50CTU CAD Model

Description

The Fairchild/ON Semiconductor FQI5N50CTU is a N-Channel MOSFET.

  • Drain-Source Breakdown Voltage: 500V
  • Continuous Drain Current: 5A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Gate-Source Voltage (Max): ±30V
  • Package: I2PAK with TO-262-3 Long Leads, I2Pak, TO-262AA dimension
  • Category: Discrete Semiconductor Products
  • Rds On (Max): 1.4 Ohm @ 2.5A, 10V
  • Power Dissipation (Max): 73W (Tc)
  • Mounting Type: Through Hole
  • Packaging: Tube/Rail

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