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Same model may have multiple batches, images only for reference.
FQP11P06 Real Image
Same model may have multiple batches, images only for reference.

FQP11P06

Part No FQP11P06
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 60V 11.4A TO-220
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 11.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 17nC @ 10V
Max Input Capacitance 550pF @ 25V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 53W (Tc)
Maximum Rds On at Id,Vgs 175 mOhm @ 5.7A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 204296-FQP11P06
Popularity Medium
Supply and Demand Status Limited
Quantity per package 1k pcs
Ultra Librarian 3D Model Ultra Librarian FQP11P06 CAD Model

Description

The Fairchild/ON Semiconductor FQP11P06 is a P-Channel MOSFET.

  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 11.4A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Rds On: 175 mOhm @ 5.7A, 10V
  • Maximum Power Dissipation: 53W (Tc)
  • Maximum Gate Charge: 17nC @ 10V
  • Package: TO-220AB
  • Operating Temperature: -55°C to 175°C (TJ)
  • Category: Discrete Semiconductor Products
  • Status: Active
  • Packaging: Tube/Rail (1k pcs)

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.9794 $58.7640
145+ $0.8039 $116.5655
225+ $0.7785 $175.1625
310+ $0.7542 $233.8020
400+ $0.7288 $291.5200
535+ $0.6537 $349.7295
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,000 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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