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FQP3N60C

Part No FQP3N60C
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 3A TO-220
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 14nC @ 10V
Max Input Capacitance 565pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 75W (Tc)
Maximum Rds On at Id,Vgs 3.4 Ohm @ 1.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220-3
Dimension TO-220-3
Win Source Part Number 1039848-FQP3N60C
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 1k pcs
Ultra Librarian 3D Model Ultra Librarian FQP3N60C CAD Model

Description

The FQP3N60C 1039848 is an N-channel MOSFET semiconductor designed and manufactured by Fairchild/ON Semiconductor.

  • Manufacturer: Fairchild/ON Semiconductor
  • Product Name: FQP3N60C 1039848
  • Type: N-channel MOSFET
  • Category: Discrete Semiconductor Products
  • Packaging: Tube/rail
  • Mounting Style: Through-hole
  • Power Dissipation: 75W (Tc)
  • Drive Voltage: 10V
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Case/Package: TO-220-3
  • Dimension: TO-220-3
  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 3A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 14nC @ 10V
  • Maximum Input Capacitance: 565pF @ 25V
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Rds On @ Id, Vgs: 3.4 Ohm @ 1.5A, 10V
  • Popularity: Medium
  • Supply and Demand Status: Sufficient
  • Quantity: 1k pcs

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