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FQP5N30

Part No FQP5N30
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 300V 5.4A TO-220
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 300V
Continuous Drain Current at 25°C 5.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 13nC @ 10V
Max Input Capacitance 430pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 70W (Tc)
Maximum Rds On at Id,Vgs 900 mOhm @ 2.7A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220-3
Dimension TO-220-3
Win Source Part Number 1039860-FQP5N30
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FQP5N30 CAD Model

Description

The FQP5N30 is an N-Channel MOSFET manufactured by Fairchild Semiconductor, now part of ON Semiconductor. It is designed for high-voltage, high-speed switching applications.

Applications:

  • Switch Mode Power Supplies (SMPS): Used in power supplies for computers, televisions, and other electronic devices.
  • Motor Control: Employed in motor drives for industrial equipment, appliances, and robotics.
  • DC-DC Converters: Utilized in voltage conversion circuits for various electronic systems.
  • Power Inverters: Used in inverters for converting DC voltage to AC voltage.
  • Lighting Ballasts: Found in electronic ballasts for fluorescent and LED lighting.

Features:

  • N-Channel MOSFET: Provides efficient switching characteristics.
  • High Voltage Rating (300V): Suitable for high-voltage applications.
  • Low On-Resistance (RDS(on)): Minimizes conduction losses.
  • High Switching Speed: Enables efficient operation in high-frequency circuits.
  • Avalanche Rated: Can withstand avalanche breakdown conditions.

Benefits:

  • Improved Efficiency: Low on-resistance reduces power dissipation.
  • Increased Power Density: High voltage and current ratings allow for compact designs.
  • Enhanced System Reliability: Avalanche rating provides robustness against voltage transients.
  • Simplified Circuit Design: Easy to drive with standard gate drive circuits.

Additional Details:

The FQP5N30 typically comes in a TO-220 package. Its key electrical characteristics include a drain-source voltage (VDS) of 300V, a continuous drain current (ID) of 5A, and a low on-resistance (RDS(on)) typically around 1.2 ohms. The gate-source voltage (VGS) is typically rated at +/- 30V. It's designed for fast switching speeds and efficient power conversion. The MOSFET is commonly used in applications where high efficiency and reliability are critical.

The avalanche rating indicates its ability to withstand transient voltage spikes without damage, enhancing the overall reliability of the circuit. Consult the manufacturer's datasheet for detailed specifications, application notes, and safe operating area (SOA) curves.

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