The FQP6N40 is an N-Channel QFET® MOSFET from Fairchild Semiconductor (now ON Semiconductor). This device is fabricated using advanced planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Applications

• Power supplies
• Adapters
• Lighting ballasts
• DC-DC converters

Features

• Low on-resistance (RDS(on))
• Low gate charge (Qg)
• High avalanche energy capability
• High ruggedness
• Fast switching

Benefits

• Increased energy efficiency.
• Reduced switching losses.
• Improved system reliability.
• Higher power density.

Additional Details

The FQP6N40 has a drain-source voltage (VDS) of 400V and a continuous drain current (ID) of 6A. Its RDS(on) is typically around 1.2 Ohms. The device is typically available in a TO-220 package. The QFET® technology ensures robust and reliable performance.