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Same model may have multiple batches, images only for reference.
FDW2601NZ Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

FDW2601NZ

Part No FDW2601NZ
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 8.2A 8TSSOP
Datasheet
FDW2601NZ Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual) Common Drain
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 8.2A
Maximum Rds On at Id,Vgs 15 mOhm @ 8.2A, 4.5V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 30nC @ 4.5V
Max Input Capacitance 1840pF @ 15V
Maximum Power Dissipation 1.6W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-TSSOP
Win Source Part Number 1038493-FDW2601NZ
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FDW2601NZ CAD Model

Description

The FDW2601NZ is a dual N-channel FET transistor from Fairchild/ON Semiconductor.

  • Application: Discrete Semiconductor Products
  • Gate Feature: Logic Level
  • Package: Reel - TR
  • Mounting: SMD (SMT)
  • Maximum Power Dissipation: 1.6W
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 8.2A @ 25°C
  • Gate-Source Threshold Voltage: 1.5V @ 250μA
  • Maximum Gate Charge: 30nC @ 4.5V
  • Maximum Input Capacitance: 1840pF @ 15V
  • Maximum Rds On @ Id,Vgs: 15 mOhm @ 8.2A, 4.5V
  • Supply and Demand: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
80+ $0.7290 $58.3200
195+ $0.5982 $116.6490
300+ $0.5795 $173.8500
415+ $0.5608 $232.7320
535+ $0.5421 $290.0235
715+ $0.4860 $347.4900
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,000 pieces
MOQ: 80 pcs
Order Increment : 1 pcs
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