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Same model may have multiple batches, images only for reference.
FQP6N70 Real Image
Same model may have multiple batches, images only for reference.

FQP6N70

Part No FQP6N70
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 700V 6.2A TO-220
Datasheet
FQP6N70 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 700V
Continuous Drain Current at 25°C 6.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 40nC @ 10V
Max Input Capacitance 1400pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 142W (Tc)
Maximum Rds On at Id,Vgs 1.5 Ohm @ 3.1A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220-3
Dimension TO-220-3
Win Source Part Number 1039870-FQP6N70
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 1k pcs
Ultra Librarian 3D Model Ultra Librarian FQP6N70 CAD Model

Description

The Fairchild/ON Semiconductor FQP6N70 is an N-channel MOSFET with a maximum power dissipation of 142W (Tc).

  • Manufacturer: Fairchild/ON Semiconductor
  • Drive Voltage: 10V
  • Drain-Source Breakdown Voltage: 700V
  • Suitable for: use in various discrete semiconductor products
  • Supply and Demand Status: sufficient
  • Case/Package: TO-220-3
  • Operating Temperature Range: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.9563 $58.6890
75+ $1.6052 $120.3900
115+ $1.5550 $178.8250
155+ $1.5049 $233.2595
200+ $1.4548 $290.9600
270+ $1.3042 $352.1340
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Availability: 15,700 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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