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Same model may have multiple batches, images only for reference.
FQP7N60 Real Image
Same model may have multiple batches, images only for reference.

FQP7N60

Part No FQP7N60
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 7.4A TO-220
Datasheet
FQP7N60 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 7.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 38nC @ 10V
Max Input Capacitance 1430pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 142W (Tc)
Maximum Rds On at Id,Vgs 1 Ohm @ 3.7A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220-3
Dimension TO-220-3
Win Source Part Number 1039879-FQP7N60
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Power Management, Lighting
Ultra Librarian 3D Model Ultra Librarian FQP7N60 CAD Model

Description

The Fairchild/ON Semiconductor FQP7N60 is a MOSFET transistor that features a power dissipation of 142W (Tc) and a drain-source breakdown voltage of 600V.

  • Manufacturer: Fairchild/ON Semiconductor
  • Product Name: FQP7N60
  • Power Dissipation: 142W (Tc)
  • Drain-Source Breakdown Voltage: 600V
  • Maximum Rds On @ Id, Vgs: 1 Ohm @ 3.7A, 10V
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Gate Charge: 38nC @ 10V
  • Maximum Input Capacitance: 1430pF @ 25V
  • Packaging: tube/rail
  • Mounting Style: through hole

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Pricing & Ordering

Quantity Unit Price Ext. Price
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20+ $5.7866 $115.7320
31+ $5.6064 $173.7984
43+ $5.4250 $233.2750
56+ $5.2449 $293.7144
74+ $4.7020 $347.9480
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Availability: 1,120 pieces
MOQ: 9 pcs
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