The FQP8N60C is a MOSFET transistor manufactured by Fairchild/ON Semiconductor.

• Mounting Style: Through-Hole
• Polarity: N-channel
• Power Dissipation: 147W (Tc)
• Drive Voltage: 10V
• Drain-Source Breakdown Voltage: 600V
• Continuous Drain Current: 7.5A (Tc) @ 25°C
• Gate-Source Threshold Voltage: 4V @ 250μA
• Max Gate Charge: 36nC @ 10V
• Max Input Capacitance: 1255pF @ 25V
• Maximum Gate-Source Voltage: ±30V
• Maximum Rds On: 1.2 Ohm @ 3.75A, 10V

The FQP8N60C is not for new designs, and the supply and demand status is balanced.